s1phb75gkxxb type s1phb75gk 08b s1phb75gk 12b s1phb 75 gk 14b s1phb75 gk 16b s1phb75 gk 18b v rrm v drm v 800 1200 1400 1600 1800 v rsm v dsm v 900 1300 1500 1700 1900 symbol test conditions maximum ratings unit t k =85 o c, module module per leg 75 75 59 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 810 970 720 860 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 2200 2200 1800 1800 a 2 s i 2 t (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 10 5 w p gavm 0.5 w i dav i davm i frms , i trms o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 2500 3000 v~ m d mounting torque (m5) terminal connection torque (m5) _ 5+15% 5+15% nm nm weight 165 g t vj =125 o c repetitive, i t =50a f=50hz, t p =200us v d =2/3v drm i g =0.3a non repetitive, i t =1/2i dav di g /dt=0.3a/us v rgm 10 v dimensions in mm (1mm=0.0394") _ _ single phase half controlled bridge modules with free wheeling diode typical t1 t2 d3 d2 d1 g2 (g4) k2 (g6) g1 (g1) k1 (g3) p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
symbol test conditions characteristic values unit v v t i t =118a; t vj =25 o c 1.64 v to for power-loss calculations only 0.83 v r t 10.5 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.5 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 100 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 5 ma i h t vj =25 o c; v d =6v; r gk = 200 ma t p =10us; i g =0.45a; t vj =25 o c di g /dt=0.45a/us 450 ma i l per thyristor/diode; dc per module r thjc 0.85 0.17 k/w per thyristor/diode; dc per module r thjk 1.10 0.22 k/w d s creeping distance on surface 16.1 mm d a creepage distance in air 7.1 mm a maximum allowable acceleration 50 m/s 2 i r , i d t vj =t vjm ; v r =v rrm ; v d =v drm 8 ma t vj =25 o c; v d =1/2v drm i g =0.45a; di g /dt=0.45a/us t gd 2 us t vj =t vjm ; i t =20a; t p =200us; v r =100v typ. t q 250 us v d =2/3v drm ; dv/dt=15v/us; di/dt=-10a/us s1phb75gkxxb single phase half controlled bridge modules with free wheeling diode p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
0.0 0 1 0.0 1 0 .1 1 0 5 0 100 150 200 250 300 2 3 4 5 6 7 0 1 10 1 10 2 10 3 0.0 0.5 1.0 1.5 2.0 0 15 30 45 60 75 90 105 0.001 0.01 0.1 1 10 0. 0 0. 5 1. 0 1 .5 2. 0 i 2 t i f sm i f a v f t s t ms t s z thjh k/w a 2 s 0 20 40 60 80 100 120 0 10 20 30 40 50 i d(a v )m t h a v a ? c v r = 0 v fig. 3 forward current versus voltage drop per diode fig. 4 surge overload current fig. 5 2 t versus time per diode fig. 6 power dissipation versus direct output current and ambient temperature fig. 7 max. forward current versus heatsink temperature fig. 8 t ransient thermal impedance junction to heatsink t vj = 125 c t vj = 45 c typ. t vj = 125 c t vj = 25 c max. t vj = 125 c t vj = 45 c constants for z thjh calculation: i r thi (k/w) t i (s) 1 0.005 0.008 2 0.2 0.05 3 0.875 0.06 4 0.47 0.25 50hz, 80% v rrm 1 i 0 20 40 60 80 0 20 40 100 20 0 220 0 20 40 60 80 100 120 140 p tot w i m)va(f a t amb c r thha : 0.5 k/w 1.0 k/w 1.5 k/w 2.0 k/w 3.0 k/w 4.0 k/w 6.0 k/w ? 60 80 90 100 70 120 140 180 60 80 160 s1phb75gkxxb single phase half controlled bridge modules with free wheeling diode p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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